Premium
Strained VO 2 Nanostructure Thin Films with an Unaffected Insulator–Metal Transition
Author(s) -
Huang Tiantian,
Wang Shuxia,
Wei Wei,
Yang Yan,
Yang Wanli,
Yuan Menghui,
Zhang Rui,
Zhang Tianning,
Chen Xiren,
Sun Yan,
Zhou Xiaohao,
Shao Jun,
Chen Xin,
Dai Ning
Publication year - 2020
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201900785
Subject(s) - nanostructure , condensed matter physics , materials science , thin film , metal–insulator transition , phase transition , strain engineering , lattice (music) , transition metal , vanadium dioxide , nanotechnology , metal , chemistry , metallurgy , physics , biochemistry , acoustics , catalysis
Insulator–metal transition (IMT) brings some fantastic physical changes and accompanies structure phase transition (SPT) in correlated vanadium dioxide (VO 2 ) materials. It is still in dispute whether the electron–phonon interaction induced by the lattice deformation or the electron–electron correlation drives the IMT transition. An alternative and challenging way to understand the mechanism is to separate SPT from IMT in VO 2 . Understanding and manipulating strain and defect in VO 2 is important to regulate the IMT behavior. Herein, strained VO 2 nanostructure thin films with unaffected IMT behavior are presented. The shifted phonon modes and the decreased interplanar spacing indicate the presence of the in‐plane strain in VO 2 nanostructure thin films. Such structural strains do not affect the transition temperature but provide a platform for the light modulation. It is believed that the unaffected IMT is beneficial for in‐depth understanding of the IMT and SPT behaviors in VO 2 and even the creation of advanced electronic devices.