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A Phenomenological Model of Mott's Insulator–Metal Phase Transition in 3D and 2D Boron‐Doped Diamond
Author(s) -
Kukushkin Vladimir A.
Publication year - 2020
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201900748
Subject(s) - diamond , materials science , boron , doping , condensed matter physics , phenomenological model , material properties of diamond , phase transition , metal–insulator transition , transition metal , electrical conductor , metal , optoelectronics , metallurgy , composite material , chemistry , physics , biochemistry , organic chemistry , catalysis
A phenomenological model of Mott's insulator–metal phase transition in boron‐doped diamond is suggested and developed. It is shown that the transition critical boron atom concentration in 3D samples at room temperature calculated on its base coincides with the experimental data. It allows to use the model for the evaluation of the transition critical sheet boron atom concentration for an experimentally much less investigated case of 2D boron‐doped diamond. This gives a value of 3.3 × 10 13 cm −2 at room temperature in agreement with experimental data on so‐called delta layers. The latter are thin boron‐doped layers embedded in intrinsic diamond and can be used for the creation of the conductive channels of high‐speed diamond field‐effect transistors.