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A Comparative Study of the γ‐Ray Radiation Effect on Zr‐Doped and Al‐Doped HfO 2 ‐Based Ferroelectric Memory
Author(s) -
Zhang Wanli,
Li Gang,
Long Xiaojiang,
Cui Lian,
Tang Minghua,
Xiao Yongguang,
Yan Shaoan,
Li Yadong,
Zhao Wenxi
Publication year - 2020
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201900736
Subject(s) - materials science , doping , ferroelectricity , thin film , polarization (electrochemistry) , irradiation , optoelectronics , radiation , nanotechnology , dielectric , optics , chemistry , nuclear physics , physics
The γ‐ray total dose radiation effects on Zr‐doped HfO 2 (HfZrO) and Al‐doped HfO 2 (HfAlO) ferroelectric thin films are comparatively studied. The J – E , P – E, C – V , ε r – f curves and fatigue characteristics of both HfZrO and HfAlO thin films are measured and analyzed with the increasing total dose from 0 to 5 Mrad (Si). The remnant polarization ( P r ) values of both HfZrO and HfAlO thin films first decrease and then increase with the increasing total dose. A competitive mechanism between the pinned domains and increasing polarization switching charges induced by radiation is proposed to explain this phenomenon. This work presents doped HfO 2 film with great radiation tolerance for nuclear and aerospace applications.