A Comparative Study of the γ‐Ray Radiation Effect on Zr‐Doped and Al‐Doped HfO 2 ‐Based Ferroelectric Memory | Zendy

Zhang Wanli | Zendy; Li Gang | Zendy; Long Xiaojiang | Zendy; Cui Lian | Zendy; Tang Minghua | Zendy; Xiao Yongguang | Zendy; Yan Shaoan | Zendy; Li Yadong | Zendy; Zhao Wenxi | Zendy

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A Comparative Study of the γ‐Ray Radiation Effect on Zr‐Doped and Al‐Doped HfO 2 ‐Based Ferroelectric Memory

Author(s) -

Zhang Wanli,

Li Gang,

Long Xiaojiang,

Cui Lian,

Tang Minghua,

Xiao Yongguang,

Yan Shaoan,

Li Yadong,

Zhao Wenxi

Publication year - 2020

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.201900736

Subject(s) - materials science , doping , ferroelectricity , thin film , polarization (electrochemistry) , irradiation , optoelectronics , radiation , nanotechnology , dielectric , optics , chemistry , nuclear physics , physics

The γ‐ray total dose radiation effects on Zr‐doped HfO 2 (HfZrO) and Al‐doped HfO 2 (HfAlO) ferroelectric thin films are comparatively studied. The J – E , P – E, C – V , ε r – f curves and fatigue characteristics of both HfZrO and HfAlO thin films are measured and analyzed with the increasing total dose from 0 to 5 Mrad (Si). The remnant polarization ( P r ) values of both HfZrO and HfAlO thin films first decrease and then increase with the increasing total dose. A competitive mechanism between the pinned domains and increasing polarization switching charges induced by radiation is proposed to explain this phenomenon. This work presents doped HfO 2 film with great radiation tolerance for nuclear and aerospace applications.

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