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Enhancement of Nonlinear Optical and Dielectric Properties of Cu 2 O Films Sandwiched with Indium Slabs
Author(s) -
Omar Ahmad,
Qasrawi Atef F.
Publication year - 2020
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201900711
Subject(s) - materials science , indium , dielectric , band gap , amorphous solid , thin film , optoelectronics , plasmon , stacking , analytical chemistry (journal) , crystallography , nanotechnology , nuclear magnetic resonance , chemistry , physics , chromatography
In this work, the effects of the insertion of indium slabs of thickness 100 nm on the performance of stacked layers of Cu 2 O are reported. Cu 2 O/In/Cu 2 O thin films coated onto ultrasonically cleaned glass substrates are structurally, morphologically, optically, and dielectrically studied. The glassy films of Cu 2 O display larger, well‐ordered grains in an amorphous sea of Cu 2 O upon insertion of indium slabs between layers of Cu 2 O. Optically, the indium slabs increase the light absorbability in the IR region by 12.5 times, narrow the energy bandgap, and widen the energy band tails region. They also enhance the nonlinearity in the dielectric response and increase the dielectric constant values by 2.5 times. In addition, the optical conductivity parameters are obtained from the fittings of the dielectric spectra. The analyses reveal an enhancement in the drift mobility, plasmon frequency, and free carrier density via stacking of the indium layer between layers of Cu 2 O. The drift mobility and plasmon frequency values reach 232.4 cm 2 V −1 s −1 and 3.95 GHz at a reduced hole‐plasmon frequency value of 6.0 × 10 14 Hz (2.48 eV). The values are promising as they indicate the applicability of Cu 2 O/In/Cu 2 O interfaces in optoelectronics as thin film transistors and electromagnetic wave cavities.