Premium
Electron Mobility in Molybdenum Disulfide: From Bulk to Monolayer
Author(s) -
Kovalenko Konstantin L.,
Kozlovskiy Sergei I.,
Sharan Nicolai N.
Publication year - 2020
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201900635
Subject(s) - electron , phonon , molybdenum disulfide , electron mobility , scattering , monolayer , condensed matter physics , materials science , atomic physics , molecular physics , chemistry , physics , optics , nanotechnology , quantum mechanics , metallurgy
Herein, the low‐field mobility in bulk, multilayer, and monolayer of molybdenum disulfide (MoS 2 ) is calculated using a quantum kinetic approach. Analytical expressions are obtained for mobility of 3D and 2D electrons for scattering by out‐of‐plane flexural and in‐plane acoustic phonons (deformation potential and piezoelectric scattering), nonpolar and polar optical (PO) phonons, charged impurities, and surface roughness. It is shown that the known experimental Hall data in bulk MoS 2 should be analyzed in the presence of two types of free electrons contributing to the charge transport: 3D electrons in the conduction band and 2D electrons in the quantum layers. Calculations show that the electron mobility in bulk, multilayer, and monolayer MoS 2 is mainly limited by acoustic (deformation potential) and PO phonons scatterings in a wide temperature range of 100–700 K. For temperatures below 100 K, electron mobility is determined by the ionized impurity scattering.