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Interface Studies in HgTe/HgCdTe Quantum Wells
Author(s) -
Mikhailov Nikolay,
Shvets Vasiliy,
Ikusov Danil,
Uzhakov Ivan,
Dvoretsky Sergey,
Mynbaev Karim,
Dluzewski Piotr,
Morgiel Jerzy,
Swiatek Zbigniew,
Bonchyk Olexander,
Izhnin Ihor
Publication year - 2020
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201900598
Subject(s) - quantum well , molecular beam epitaxy , materials science , optoelectronics , transmission electron microscopy , dark field microscopy , scanning transmission electron microscopy , field (mathematics) , optics , epitaxy , microscopy , nanotechnology , physics , layer (electronics) , laser , mathematics , pure mathematics
Transmission electron microscopy (TEM) is used for the study of interfaces in two HgTe/HgCdTe single quantum‐well (QW) structures grown by molecular beam epitaxy on GaAs substrates. The studies are conducted in bright‐field and scanning/high‐angle annular dark field modes. The effect of the growth mode on the sharpness of interfaces in the QWs is investigated. Effective in situ ellipsometric control over chemical composition and thickness of the layers constituting the QW structures is demonstrated.