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A Deep Carbon‐Related Acceptor Identified through Photo‐Induced Electron Paramagnetic Resonance
Author(s) -
Paudel Subash,
Zvanut Mary Ellen,
Iwinska Malgorzata,
Sochacki Tomasz,
Bockowski Michal
Publication year - 2020
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201900593
Subject(s) - carbon fibers , electron paramagnetic resonance , acceptor , shallow donor , materials science , crystallographic defect , excitation , chemical vapor deposition , paramagnetism , analytical chemistry (journal) , photochemistry , molecular physics , atomic physics , chemistry , doping , nuclear magnetic resonance , nanotechnology , optoelectronics , crystallography , condensed matter physics , physics , quantum mechanics , chromatography , composite number , composite material
Herein, a carbon‐related point defect in thick free‐standing carbon‐doped GaN substrates grown by halide chemical vapor deposition is examined. Carbon is intentionally introduced to concentrations between 2 × 10 17 and 10 19 cm −3 , and the number of point defects is proportional to the carbon concentration. The carbon center is detected using electron paramagnetic resonance spectroscopy after photo‐excitation with light greater than 2.8 eV. Simultaneous monitoring of the defect and a shallow donor confirms that the excitation occurs via removal of an electron from the deep carbon‐related acceptor and subsequent capture by the shallow donor. The study indicates that the defect level for the carbon defect is at least 0.7 eV above the valence band edge and therefore an excellent candidate for growth of semi‐insulating GaN.