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Investigation of the Structural and Optical Properties of Compositionally V‐Graded Strained In x Ga 1– x N Layers
Author(s) -
Ghosh Pijush K.,
Stanchu Hryhorii V.,
Maidaniuk Yurii,
Sarollahi Mirsaeid,
Aldawsari Manal,
Kuchuk Andrian V.,
Mazur Yuriy I.,
Salamo Gregory J.,
Ware Morgan E.
Publication year - 2020
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201900591
Subject(s) - photoluminescence , materials science , molecular beam epitaxy , reciprocal lattice , diffraction , band gap , crystallography , luminescence , substrate (aquarium) , optoelectronics , epitaxy , nanotechnology , optics , chemistry , layer (electronics) , physics , oceanography , geology
Compositionally graded In x Ga 1 –x N‐based materials have been receiving more attention recently due to both their novel structure and intrinsic properties. However, high‐quality material with a well‐controlled and optimized grade to high In composition remains challenging to grow. Herein, the growth and characterization of continuous 2D films of compositionally graded In x Ga 1 –x N are investigated using molecular beam epitaxy (MBE) on (0001) GaN templates at 575 °C. Each film is formed by compositionally grading the growth from GaN to In x Ga 1– x N and back to GaN, symmetrically, such that the bandgap and the composition of Ga follow a V‐shaped pattern. Here x has been chosen to be ≈0.20 and 0.22. These compositions are confirmed through high‐resolution X‐ray diffraction simulations. Furthermore, asymmetric reciprocal space mapping reveals complete coherence with the GaN substrate. Finally, photoluminescence is measured at low temperature to demonstrate the luminescent properties of the films.