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Low‐to‐Mid Al Content ( x = 0–0.56) Al x In 1− x N Layers Deposited on Si(100) by Radio‐Frequency Sputtering
Author(s) -
Blasco Rodrigo,
Valdueza-Felip Sirona,
Montero Daniel,
Sun Michael,
Olea Javier,
Naranjo Fernando B.
Publication year - 2020
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201900575
Subject(s) - wurtzite crystal structure , materials science , sputtering , sapphire , analytical chemistry (journal) , photoluminescence , diffraction , blueshift , surface roughness , optoelectronics , optics , thin film , nanotechnology , chemistry , zinc , physics , metallurgy , laser , chromatography , composite material
Radio‐frequency (RF) sputtering is a low‐cost technique for the deposition of large‐area single‐phase AlInN on silicon layers with application in photovoltaic devices. Here, the effect of the Al mole fraction x from 0 to 0.56 on the structural, morphological, electrical, and optical properties of n‐Al x In 1− x N layers deposited at 550 ºC on p‐Si(100) by RF sputtering is studied. X‐ray diffraction data show a wurtzite structure oriented along the c ‐axis in all samples, where the full width at half maximum of the rocking curve around the InN (0002) diffraction peak decreases from ≈9° to ≈3° while incorporating Al to the AlInN layer. The root‐mean‐square surface roughness, estimated from atomic force microscopy, evolves from 20 nm for InN to 1.5 nm for Al 0.56 In 0.44 N. Low‐temperature photoluminescence spectra show a blueshift of the emission energy from 1.59 eV (779 nm) for InN to 1.82 eV (681 nm) for Al 0.35 In 0.65 N according to the Al content rise. Hall effect measurements of Al x In 1− x N (0 < x < 0.35) on sapphire samples grown simultaneously point to a residual n‐type carrier concentration in the 10 21 cm −3 range. The developed n‐AlInN/p‐Si junctions present promising material properties to explore their performance operating as solar cell devices.