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Molecular Beam Epitaxy Growth of Large‐Area GaN/AlN 2D Hole Gas Heterostructures
Author(s) -
Chaudhuri Reet,
Bader Samuel James,
Chen Zhen,
Muller David,
Xing Huili Grace,
Jena Debdeep
Publication year - 2020
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201900567
Subject(s) - molecular beam epitaxy , heterojunction , optoelectronics , materials science , wafer , substrate (aquarium) , epitaxy , field effect transistor , transistor , nanotechnology , layer (electronics) , voltage , physics , oceanography , geology , quantum mechanics
Large‐area growth of polarization‐induced 2D hole gases (2DHGs) in a GaN/AlN heterostructure using molecular beam epitaxy (MBE) is demonstrated. A study of the effect of metal fluxes and substrate temperature during growth is conducted to optimize the 2DHG transport. These conditions are adopted for the growth on 2 in. wafer substrates. The obtained results represent a step forward towards achieving a GaN/AlN 2DHG platform for high‐performance wide‐bandgap p‐channel field effect transistors (FETs).