Molecular Beam Epitaxy Growth of Large‐Area GaN/AlN 2D Hole Gas Heterostructures | Zendy

Chaudhuri Reet | Zendy; Bader Samuel James | Zendy; Chen Zhen | Zendy; Muller David | Zendy; Xing Huili Grace | Zendy; Jena Debdeep | Zendy

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Molecular Beam Epitaxy Growth of Large‐Area GaN/AlN 2D Hole Gas Heterostructures

Author(s) -

Chaudhuri Reet,

Bader Samuel James,

Chen Zhen,

Muller David,

Xing Huili Grace,

Jena Debdeep

Publication year - 2020

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.201900567

Subject(s) - molecular beam epitaxy , heterojunction , optoelectronics , materials science , wafer , substrate (aquarium) , epitaxy , field effect transistor , transistor , nanotechnology , layer (electronics) , voltage , physics , oceanography , geology , quantum mechanics

Large‐area growth of polarization‐induced 2D hole gases (2DHGs) in a GaN/AlN heterostructure using molecular beam epitaxy (MBE) is demonstrated. A study of the effect of metal fluxes and substrate temperature during growth is conducted to optimize the 2DHG transport. These conditions are adopted for the growth on 2 in. wafer substrates. The obtained results represent a step forward towards achieving a GaN/AlN 2DHG platform for high‐performance wide‐bandgap p‐channel field effect transistors (FETs).

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