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Effect of Wafer Off‐Angles on Defect Formation in Drift Layers Grown on Free‐Standing GaN Substrates
Author(s) -
Shiojima Kenji,
Horikiri Fumimasa,
Narita Yoshinobu,
Yoshida Takehiro,
Mishima Tomoyoshi
Publication year - 2020
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201900561
Subject(s) - materials science , wafer , schottky diode , deep level transient spectroscopy , spectral line , crystal (programming language) , schottky barrier , capacitance , optoelectronics , analytical chemistry (journal) , chemistry , electrode , silicon , physics , diode , astronomy , chromatography , computer science , programming language
The effect of the surface off‐angle toward either the a ‐ or m ‐axis on the defect formation is characterized using deep‐level transient spectroscopy (DLTS) in conjunction with the carrier concentration for Ni Schottky contacts formed on n‐GaN drift layers. In both noncontact and conventional capacitance–voltage results, off‐angle dependence on carrier concentration is observed. For all samples, a large dominant peak appears at approximately 270 K in the DLTS spectra and is attributed to E3 ( E C − 0.57–0.61 eV) defects. Carbon atoms can act as carrier compensators and form E3 defects. These results can be interpreted based on how C incorporation during crystal growth depends on the off‐angle.