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A Study on the First‐Derivative Output Properties of GaN Static Induction Transistor with Submicrometer Fin Width
Author(s) -
Chun Jaeyi,
Li Siwei,
Malakoutian Mohamadali,
Ji Dong,
Chowdhury Srabanti
Publication year - 2020
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201900545
Subject(s) - fin , ohmic contact , static induction transistor , transistor , materials science , voltage , maxima and minima , optoelectronics , physics , condensed matter physics , threshold voltage , nanotechnology , mathematical analysis , mathematics , quantum mechanics , composite material , layer (electronics)
The first derivative of output curves of a Schottky‐junction vertical channel GaN static induction transistor (SIT) with a submicrometer‐sized fin is studied to understand its fundamental electrical properties. It is found that the derivative of output curves increases with the increase in drain voltage ( V ds ) in ohmic region because of the raised potential minima in the channel, which is not seen in SITs with a relatively long fin width. The influence of the gate voltages ( V gs ) and V ds on electric potential in the channel is demonstrated by evaluating the contribution of V gs and V ds , expressed through two coefficients α and β . The ratio of α to β increases up to 31.1 from 16.3 with decrease in the fin width from 0.9 to 0.5 μm, showing a higher dependency of the potential minima on V gs and the fin width. The voltage gain expressed by α / β is 14.9 dB for the GaN SIT with a fin width of 0.5 μm.