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Behavior of Threading Dislocations from GaN Substrate to Epitaxial Layer
Author(s) -
Inotsume Sho,
Kokubo Nobuhiko,
Yamada Hisashi,
Onda Shoichi,
Kojima Jun,
Ohara Junji,
Harada Shunta,
Tagawa Miho,
Ujihara Toru
Publication year - 2020
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201900527
Subject(s) - epitaxy , burgers vector , materials science , threading (protein sequence) , substrate (aquarium) , layer (electronics) , raman spectroscopy , optoelectronics , photoluminescence , crystallography , optics , dislocation , condensed matter physics , composite material , chemistry , physics , nuclear magnetic resonance , geology , oceanography , protein structure
Threading dislocations (TDs) in the GaN substrate and homoepitaxial layer are nondestructively evaluated using X‐ray topography (XRT), Raman spectroscopy, and multiphoton photoluminescence (MPPL) imaging. When the XRT and Raman mapping images are compared, TDs in the GaN substrate are identified as threading edge dislocations (TEDs), threading mixed dislocations (TMDs), and threading screw dislocations (TSDs). TDs are observed to propagate from the GaN substrate to the epitaxial layer. From MPPL imaging, the TEDs are found to be inclined in the [ 1 1 ¯ 00 ] direction, which is at 90° from the Burgers vector. The TMD studied in detail is found to be inclined in the [ 1 ¯ 2 1 ¯ 0 ] direction, which is parallel to the Burgers vector. The feasibility of identifying TDs via analysis of the inclined direction of the dislocations in the GaN epitaxial layer is suggested.