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Photoluminescence Line‐Shape Analysis of Highly n‐Type Doped Zincblende GaN
Author(s) -
Baron Elias,
Goldhahn Rüdiger,
Deppe Michael,
As Donat J.,
Feneberg Martin
Publication year - 2020
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201900522
Subject(s) - photoluminescence , materials science , molecular beam epitaxy , doping , band gap , gallium , spectral line , condensed matter physics , substrate (aquarium) , optoelectronics , wide bandgap semiconductor , acceptor , epitaxy , nanotechnology , physics , layer (electronics) , astronomy , geology , metallurgy , oceanography
An investigation of different n‐type doped zincblende gallium nitride thin films measured by photoluminescence from 7 K to room temperature is presented. The spectra change with increasing free‐carrier concentration due to many‐body effects such as the Burstein–Moss shift and band‐gap renormalization. The samples are grown by molecular beam epitaxy on a 3C‐SiC/Si (001) substrate, and a free‐carrier concentration above 10 20 cm −3 is achieved by introducing germanium as a donor. The analysis of the measured spectra by a line‐shape fit yields different transition processes for different doping concentrations and temperatures, such as a band–band transition and a band–acceptor transition. The conduction band dispersion of Kane's model is perfectly suited to explain the experimental data quantitatively.