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Growth Temperature Effects of Chemical Vapor Deposition‐Grown Boron Nitride Layer Using B 2 H 6 and NH 3
Author(s) -
Yamada Hisashi,
Inotsume Sho,
Kumagai Naoto,
Yamada Toshikazu,
Shimizu Mitsuaki
Publication year - 2020
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201900521
Subject(s) - high resolution transmission electron microscopy , chemical vapor deposition , boron nitride , analytical chemistry (journal) , materials science , raman spectroscopy , boron , nitride , substrate (aquarium) , stacking , thin film , transmission electron microscopy , crystallography , scanning electron microscope , layer (electronics) , chemistry , nanotechnology , optics , physics , oceanography , organic chemistry , chromatography , geology , composite material
The boron nitride (BN) thin films on Al 2 O 3 substrates grown by chemical vapor deposition (CVD) using alternating supply of B 2 H 6 and NH 3 are investigated. A significant reduction in growth rates is observed when the growth temperature ( T g ) is decreased from 1360 to 1140 °C, indicating incomplete decomposition of B 2 H 6 . The 2 θ / ω scans of high‐resolution X‐ray diffraction (HRXRD) reveal that the intensity ratio of 2 θ = 26.7°/54.0° is 16, which is close to the theoretical intensity ratio for hexagonal BN ( h ‐BN) of 17. By reducing T g , the peak at 2 θ = 26.2° is appeared, which is considered to the turbostratic BN ( t ‐BN). The Raman shift at 1369 cm −1 with a full width at half maximum of 20 cm −1 is analyzed, corresponding to the first‐order E 2g symmetry vibrational mode in h ‐BN. The high‐resolution transmission electron microscopy (HRTEM) confirms aligned 2D stacking of BN layers and the distance between interlayers of 0.3326 nm. The interlayers of 1.0 nm AlON are identified between BN layers and Al 2 O 3 substrate.