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Minority Carrier Traps in Ion‐Implanted n‐Type Homoepitaxial GaN
Author(s) -
Alfieri Giovanni,
Sundaramoorthy Vinoth Kumar
Publication year - 2020
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201900506
Subject(s) - ion implantation , materials science , optoelectronics , valence band , cathode , ion , anode , band gap , chemistry , electrode , organic chemistry
Ion implantation is a key step for device processing. This is required for anode/cathode or junction termination extension formation, which relies on the use of multiple‐energy implantation profiles (box profile). However, electrically active defects are known to arise after implantation, especially in the implant‐tail region. Although there are studies on majority carrier traps in implanted GaN, not much is known on minority carrier traps. For this reason, the electrical characterization of minority carrier levels is conducted in ion‐implanted n‐type GaN. Three electrically active levels are found in the 0.18–1.2 eV energy range, above the valence band edge, and their nature is discussed in the light of theoretical studies found in the literature.