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Electrical Transport Properties of Gallium Phosphide under High Pressure
Author(s) -
Li Yuqiang,
Liu Jie,
Xiao Ningru,
Yu Liyuan,
Zhang Jianxin,
Ning Pingfan,
Zhang Zanyun,
Niu Pingjuan
Publication year - 2020
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201900470
Subject(s) - gallium phosphide , electrical resistivity and conductivity , materials science , gallium , hall effect , phosphide , condensed matter physics , grain boundary , electrical resistance and conductance , phase transition , indium phosphide , metal , composite material , gallium arsenide , metallurgy , optoelectronics , electrical engineering , microstructure , physics , engineering
The electrical transport properties of gallium phosphide (GaP) under high pressure (up to 50 GPa) are investigated using in situ impedance‐spectrum and Hall‐effect measurements. A discontinuous resistance is observed at 9.9 GPa because of the pressure‐induced grain boundary effect, whereas the pressure‐induced metallization of GaP occurred at ≈24.6 GPa. The metallization transition is determined by measuring the temperature‐dependent resistance and resistivity, and the transition is observed to be reversible. The main cause of the sharp decrease in the resistance and resistivity is a pressure‐induced structural phase transition at 39.3 GPa, as reflected by the measured Hall parameters.