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Optimization of Metal‐Organic Chemical Vapor Deposition Regrown n‐GaN
Author(s) -
Leone Stefano,
Brueckner Peter,
Kirste Lutz,
Doering Philipp,
Fuchs Theodor,
Mueller Stefan,
Prescher Mario,
Quay Ruediger,
Ambacher Oliver
Publication year - 2020
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201900436
Subject(s) - epitaxy , materials science , ohmic contact , optoelectronics , chemical vapor deposition , annealing (glass) , metalorganic vapour phase epitaxy , impurity , diffusion , nanotechnology , chemistry , metallurgy , layer (electronics) , physics , organic chemistry , thermodynamics
GaN devices for high‐frequency and high‐power applications often need n‐doped GaN layers on top of their structures. Such layers can be either grown in an epitaxial reactor or formed by implantation or annealing of Si‐containing layers (e.g., a SiO 2 mask). These processes are typically performed at high temperatures, which generate the undesired effect of atom diffusion between the different epitaxial layers; consequently, the electrical performance of the final device will be hampered. Herein, an optimized epitaxial growth process of n‐GaN layers is developed with the focus on minimizing the atom diffusion process, while preserving a high material quality and excellent electrical characteristics, such as very low contact resistance for n‐GaN ohmic contacts or high electron mobility in GaN npin structures. A low growth temperature process combined with improved growth conditions to minimize the incorporation of impurities is successfully optimized and demonstrated on different epitaxial reactors.