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Chemical Vapor Deposition of Boron‐Incorporated Graphitic Carbon Nitride Film for Carbon‐Based Wide Bandgap Semiconductor Materials
Author(s) -
Urakami Noriyuki,
Kosaka Maito,
Hashimoto Yoshio
Publication year - 2020
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201900375
Subject(s) - thin film , chemical vapor deposition , x ray photoelectron spectroscopy , band gap , materials science , analytical chemistry (journal) , borazine , carbon nitride , carbon fibers , carbon film , boron , sapphire , boron nitride , chemical engineering , nanotechnology , chemistry , composite number , organic chemistry , optoelectronics , optics , composite material , photocatalysis , engineering , catalysis , laser , physics
This article discusses the growth of B atoms incorporated into the graphitic carbon nitride (g‐C 3 N 4 ) thin films on c‐plane sapphire substrates at various growth temperatures by thermal chemical vapor deposition (CVD) using melamine and ammonia borane as precursors. The B incorporation is achieved at a growth temperature of 618 °C, which is slightly higher than the optimal growth temperature of g‐C 3 N 4 thin films. The signal peak for the B 1s core level attributed to B—N bonds is observed by X‐ray photoelectron spectroscopy, indicating the realization of B incorporation into g‐C 3 N 4 films. With an increase in the growth temperature up to 650 °C, a monotonically increasing B composition and a decreasing C composition are observed, implying that B atoms are incorporated into g‐C 3 N 4 by the substitution into C sites. A shift of photoluminescene (PL) peak energy is observed. The PL peak shifts from 2.75 eV for unintentionally doped thin film to 3.60 eV for B‐incorporated thin films with a composition of 8.0%. The B composition dependence of PL peak energies is in good agreement with the quadratic function, suggesting that the bandgap bowing occurs due to B incorporation into the g‐C 3 N 4 thin films as in conventional compound semiconductor alloys.