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n‐Doped InGaP Nanowire Shells in GaAs/InGaP Core–Shell p–n Junctions
Author(s) -
Liborius Lisa,
Bieniek Jan,
Nägelein Andreas,
Tegude Franz-Josef,
Prost Werner,
Hannappel Thomas,
Poloczek Artur,
Weimann Nils
Publication year - 2020
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201900358
Subject(s) - nanowire , materials science , ohmic contact , doping , optoelectronics , electroluminescence , quantum tunnelling , common emitter , epitaxy , coaxial , diode , annealing (glass) , nanotechnology , electrical engineering , composite material , engineering , layer (electronics)
Herein, the characterization of n‐doped InGaP:Si shells in coaxial not‐intentionally doped (nid)‐GaAs/n‐InGaP as well as n–p–n core–multishell nanowires grown by metalorganic vapor‐phase epitaxy is reported. The multi‐tip scanning tunneling microscopy technique is used for contact‐independent resistance profiling along the tapered nid‐GaAs/n‐InGaP core–shell nanowires to estimate the established emitter shell doping concentration to N D ≈ 3 · 10 18 cm −3 . Contacts on these shells are demonstrated and exhibit ohmic current–voltage characteristics after annealing. Application potential is demonstrated by the growth and processing of coaxial p‐GaAs/n‐InGaP junctions in n–p–n core–multishell nanowires, with n‐InGaP being the electron‐supplying emitter material. Current–voltage characteristics and temperature‐dependent electroluminescence measurements substantiate successful doping of the n‐InGaP shell. A tunneling‐assisted contribution to the leakage currents of the investigated p–n junctions is verified by the sub‐bandgap luminescence at low temperatures and is attributed to radiative tunneling processes.