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Significant Effects of the D − Band on the Hall Coefficient and the Hall Mobility of n‐InP
Author(s) -
Kajikawa Yasutomo
Publication year - 2020
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201900354
Subject(s) - hall effect , condensed matter physics , impurity , physics , hubbard model , electrical resistivity and conductivity , quantum mechanics , superconductivity
The Hall‐effect measurement data on n‐InP samples reported in the literature are analyzed on the basis of an impurity‐Hubbard‐band model to show the significant effects of the top Hubbard band (D − band) on the Hall coefficient and the Hall mobility. The activation energy E 2 of hopping drift mobility in the top Hubbard band is deduced and is shown to obey the relation ofE 2 ∝ ( d ND − d NDcr ) , where d ND is the average net donor separation and d NDcr is its critical value at which the metal–insulator transition occurs.