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Highly Crystalline MoS 2 Thin Films Fabricated by Sulfurization
Author(s) -
Hutar Peter,
Spankova Marianna,
Sojkova Michaela,
Dobrocka Edmund,
Vegso Karol,
Hagara Jakub,
Halahovets Yuriy,
Majkova Eva,
Siffalovic Peter,
Hulman Martin
Publication year - 2019
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201900342
Subject(s) - x ray photoelectron spectroscopy , materials science , sapphire , substrate (aquarium) , raman spectroscopy , thin film , diffraction , sputter deposition , spectroscopy , sputtering , stoichiometry , raman scattering , epitaxy , crystallography , analytical chemistry (journal) , nanotechnology , optics , chemistry , chemical engineering , layer (electronics) , laser , oceanography , physics , organic chemistry , quantum mechanics , chromatography , geology , engineering
The 2D transition metal dichalcogenides attract high research interest due to their electronic properties, and MoS 2 is likely the most explored compound of this group. The fabrication of MoS 2 thin films by the sulfurization of predeposited MoO 3 layers on a c‐plane sapphire substrate by radio frequency magnetron sputtering from stoichiometric MoO 3 target is reported. The structure and properties of as‐grown MoO 3 and MoS 2 layers are characterized by several methods including X‐ray diffraction, grazing‐incidence wide‐angle X‐ray scattering, photoelectron spectroscopy, Raman spectroscopy, and atomic force microscopy. Furthermore, the influence of the crystallographic structure of MoO 3 layers on the final MoS 2 films is studied. The influence of the crystallographic structure of MoO 3 on the resulting MoS 2 films is focused. A strong texturation in the c ‐axis direction and an indication of a high degree in‐plane orientation of MoS 2 thin films on the c‐sapphire substrate is observed.