Chemical Vapor Deposition Growth of BN Thin Films Using B 2 H 6 and NH 3

The use of chemical vapor deposition (CVD) for the growth of BN thin films on Al 2 O 3 substrates using B 2 H 6 and NH 3 is investigated. The simultaneous supply of B 2 H 6 and NH 3 at a growth temperature of 1360 °C under a pressure of 100 mbar results in a rough surface, indicating 3D island growth, regardless of the V/III ratio. Furthermore, a significant decrease in growth rate is observed at high V/III ratios, owing to parasitic reactions between the B 2 H 6 and NH 3 sources. In contrast, alternating the supply of B 2 H 6 and NH 3 results in BN films with honeycomb‐like wrinkle patterns. The X‐ray diffraction peak intensities from the (002) and (004) planes of hexagonal boron nitride ( h ‐BN) increase as the number of supply cycles is increased. The BN film deposited with 1000 supply cycles shows a Raman shift at 1369 cm −1 with a full width at half maximum of 20 cm −1 , corresponding to the first‐order E 2g symmetry vibrational mode in h ‐BN.