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Solution‐Grown Hypervalent CsI 3 Crystal for High‐Sensitive X‐Ray Detection
Author(s) -
Zhang Bin-Bin,
Liu Xin,
Xiao Bao,
Gao Kaige,
Dong Song-Tao,
Xu Yadong,
He Yucong,
Zhou Jian,
Jie Wanqi
Publication year - 2020
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201900290
Subject(s) - hypervalent molecule , photocurrent , crystal (programming language) , semiconductor , photoconductivity , materials science , halide , sensitivity (control systems) , optoelectronics , carbon fibers , single crystal , analytical chemistry (journal) , chemistry , crystallography , inorganic chemistry , electronic engineering , iodine , computer science , metallurgy , programming language , chromatography , composite number , engineering , composite material
Herein, a novel binary compound hypervalent CsI 3 crystal is designed for X‐ray detection. Solution‐grown rod‐like CsI 3 single crystal is identified as a semiconductor with a bandgap of 1.79 eV and high resistivity of 2.17 × 10 9 Ω cm, which make it suitable for X‐ray detection. Based on carbon/CsI 3 crystal/carbon device, a high X‐ray sensitivity of up to 158.1 ± 6.0 μC Gy −1 cm −2 is achieved under a low electrical field of 55 V mm −1 , which is eight times higher than that of the commercial α‐Se X‐ray detectors. The high sensitivity of hypervalent CsI 3 is attributed to the long carrier life time (≈470 μs) and large photocurrent gain (150%). The potential applications of photoconversion and nuclear radiation detection using alkali halides are demonstrated.