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Carrier Transfer of Deep‐Level Localized States in Type‐II In x Ga 1− x As/GaN y As 1− y Short‐Period Superlattice
Author(s) -
An Xuee,
Ma Chuanhe,
Zheng Xinhe,
Hong Jin,
Li Bo,
Sun Lin,
Yue Fangyu,
Chen Ye
Publication year - 2020
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201900258
Subject(s) - photoluminescence , superlattice , quantum well , excitation , materials science , condensed matter physics , photoluminescence excitation , saturation (graph theory) , band bending , blueshift , molecular physics , optoelectronics , chemistry , optics , physics , laser , mathematics , quantum mechanics , combinatorics
Optical properties of InGaAs/GaNAs superlattice are investigated by the photoluminescence and reflectance measurements. A quantum well (QW) emission P M (centered at ≈1.2 eV) and a broad low‐energy emission (LEE) band, which can be resolved to three peaks P A′ , P A , and P B (0.77, 0.83, and 0.92 eV) are observed. The peak positions of the LEE exhibit S‐shaped behavior, whereas the QW emission shows a red shift with increasing temperature. The LEE bands are attributed to N‐related deep‐level localized state. The photoluminescence (PL) peak of QW exhibits a significant blue shift and saturation effect with increasing excitation density, which is interpreted in terms of the band‐bending model in the InGaAs/GaNAs short‐period superlattice (SPSL) with a type II band alignment. Furthermore, carrier transfer among these N‐related localized states is elucidated by examining the temperature‐dependent photoluminescence. Such carrier transfer is also demonstrated by the thermal effect under high excitation density.