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Nitrogen as a Suitable Replacement for Argon within Methane‐Based Hot‐Wall Graphene Chemical Vapor Deposition
Author(s) -
Gausden Johannes,
Siris Rita,
Stimpel-Lindner Tanja,
McEvoy Niall,
Duesberg Georg S.,
Hallam Toby
Publication year - 2019
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201900240
Subject(s) - chemical vapor deposition , graphene , methane , nitrogen , x ray photoelectron spectroscopy , raman spectroscopy , argon , materials science , analytical chemistry (journal) , chemical engineering , chemistry , environmental chemistry , nanotechnology , organic chemistry , optics , physics , engineering
Of the gases frequently used during graphene chemical vapor deposition (CVD), argon plays no direct chemical role and therefore may be suitable for substitution with the cheaper alternative of nitrogen. The impact of using nitrogen as a carrier gas in methane‐based hot‐wall graphene CVD is investigated using Raman spectroscopy, X‐ray photoelectron spectroscopy, and time‐of‐flight secondary ion mass spectroscopy. No increase in the nitrogen signal is observed within graphene grown within a nitrogen atmosphere within the detection limits of the spectroscopic techniques used.