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Formation of Sn‐Induced Nanowires on Si(557)
Author(s) -
Jäger Monika,
Pfnür Herbert,
Fanciulli Mauro,
Weber Andrew P.,
Dil Jan Hugo,
Tegenkamp Christoph
Publication year - 2019
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201900152
Subject(s) - scanning tunneling microscope , nanowire , materials science , angle resolved photoemission spectroscopy , surface reconstruction , low energy electron diffraction , phase (matter) , diffraction , low energy electron microscopy , crystallography , electron diffraction , condensed matter physics , electronic structure , surface (topology) , nanotechnology , electron microscope , chemistry , optics , geometry , physics , mathematics , organic chemistry
In this study, the growth of Sn on Si(557) surfaces by means of scanning tunneling microscopy, low energy electron diffraction and angle resolved photoemission is analyzed. Depending on the Sn submonolayer coverage, various Sn‐nanowires are identified. For Sn‐coverages above 0.5 ML, ( 3 × 3 )‐ and ( 2 3 × 2 3 )‐reconstructions are found. In particular, these phases cover extended (111)‐areas, thus leading to an inhomogeneous refacetting of the Si(557) surface. The (223)‐facets between the mini‐(111) terraces reveal structures, which resemble a ×2 reconstruction along edges. The initial step structure of the Si(557) surface is maintained for Sn‐coverages below 0.5 ML, showing the α ‐Sn phase on 3 nm wide (111)‐terraces. In contrast to the 2D Mott state of α ‐Sn/Si(111), this confinement seems to quench the correlated electronic phase yielding metallic surface states at 40 K, in accordance with photoemission.