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Origin of Pressure‐Induced Metallization in Cu 3 N: An X‐ray Absorption Spectroscopy Study (Phys. Status Solidi B 11/2018)
Author(s) -
Kuzmin Alexei,
Anspoks Andris,
Kalinko Aleksandr,
Timoshenko Janis,
Nataf Lucie,
Baudelet François,
Irifune Tetsuo
Publication year - 2018
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201870141
Subject(s) - extended x ray absorption fine structure , xanes , copper , analytical chemistry (journal) , absorption spectroscopy , absorption edge , crystal structure , spectroscopy , lattice constant , absorption (acoustics) , materials science , x ray absorption spectroscopy , chemistry , x ray absorption fine structure , band gap , crystallography , diffraction , optics , metallurgy , optoelectronics , composite material , physics , chromatography , quantum mechanics
X‐ray absorption spectroscopy is a powerful tool to probe in situ changes in the local structure of a material induced by pressure. In article no. 1800073 it was used by Kuzmin et al. to study the behavior of copper nitride (Cu 3 N) crystal lattice at high pressure (0–26.7 GPa). The analysis of the Cu K‐edge X‐ray absorption near‐edge structure (XANES) and extended X‐ray absorption fine structure (EXAFS) suggests that at all pressures the local atomic environment around copper atoms remains close to that in cubic Pm‐3m phase. At the same time, a reduction of the lattice parameter of Cu 3 N by about 2% was found upon increasing pressure up to 26.7 GPa. These results indicate that the transition to the metal state in Cu 3 N above 5 GPa, observed previously using pressure‐dependent electrical resistance and optical absorption measurements, is due to the band gap collapse with a decrease of the unit cell volume.