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Reflectivity of Plasmon–Phonon Modes in Grating‐Coupled AlGaN/GaN Heterostructures Grown on SiC and GaN Substrates (Phys. Status Solidi B 5/2018)
Author(s) -
Jais Vytautas,
Jakštas Vytautas,
Kašalynas Irmantas,
Prystawko Pawel,
Kruszewski Piotr
Publication year - 2018
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201870118
Subject(s) - materials science , heterojunction , grating , optoelectronics , plasmon , phonon , high electron mobility transistor , wide bandgap semiconductor , condensed matter physics , semiconductor , polariton , reflectivity , coupling (piping) , transistor , optics , physics , quantum mechanics , voltage , metallurgy
In article no. 1700498 , Janonis et al. discuss the structure design and excitation peculiarities of surface phonon polariton modes in AlGaN/GaN high electron mobility transistor (HEMT) structures grown either on GaN or SiC substrates. Wide band gap materials possess large splitting between transverse optical (TO) and longitudinal optical (LO) modes, their employment is convenient for fundamental research of the resonant modes. Depending on the sample structure and the period of the metallic grating placed on the heterostructure, weak and strong resonant coupling of plasmons to phonons were observed in the underlying semiconductor layers across the Reststrahlen band region.