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Control Over Dimer Orientations on Vicinal Si(100) Surfaces in Hydrogen Ambient: Kinetics Versus Energetics (Phys. Status Solidi B 4/2018)
Author(s) -
Brückner Sebastian,
Supplie Oliver,
Dobrich Anja,
Kleinschmidt Peter,
Hannappel Thomas
Publication year - 2018
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201870117
Subject(s) - vicinal , nucleation , kinetics , hydrogen , energetics , materials science , misorientation , terrace (agriculture) , chemical physics , semiconductor , dimer , crystallography , chemistry , optoelectronics , thermodynamics , physics , history , microstructure , organic chemistry , archaeology , quantum mechanics , grain boundary
In chemical vapor ambient, Si(100) surfaces and hydrogen can strongly interact with each other. As a result, energetic considerations cannot solely describe step and terrace formation sufficiently, as the formation of the equilibrium surface reconstruction can be counteracted by surface kinetics, in particular induced by hydrogen and driven by temperature. Combining optical in situ spectroscopy and in vacuo analysis, Brückner et al. (article no. 1700493 ) can confirm that high H 2 pressures promote kinetically driven processes, while the impact of energetics increases with offcut magnitude. Suitable process routes, accordingly, strongly vary with the degree of misorientation. Dictated by the dominant driving force, monohydride terminated Si(100) surfaces with either “A‐type” (1×2) or “B‐type” (2×1) majority domains can be prepared both on low‐offcut and vicinal surfaces. Optical fingerprints of these Si(100) surfaces thereby enable in situ control and process fine‐tuning with regard to an atomic surface order which is suitable for subsequent nucleation and integration of III–V compound semiconductors for future high‐performance optoelectronic devices. [Scheme of the Si(100) terrace kinetics (lower right corner) adapted from S. Brückner et al., New J. Phys . 2013 , 15, 113049.]