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Berry‐Phase in a Periodically Driven Single Molecule Magnet Transistor
Author(s) -
González Gabriel
Publication year - 2019
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201800725
Subject(s) - condensed matter physics , physics , geometric phase , transverse plane , magnetic field , quantum tunnelling , electron , magnet , conductance , quantum mechanics , structural engineering , engineering
The electron transport through a single molecule magnet transistor in the presence of a local transverse magnetic field and ac‐driven gate voltage has been considered. The conductance has been calculated as a function of the electron energy and transverse magnetic field by using the Floquet and Landauer formalism. It is shown that the time periodic potential causes zero transmission resonances that oscillate as a function of the transverse magnetic field due to the Berry phase interference associated with two quantum tunneling paths. It has been found that these Berry phase oscillations can be detected in the conductance as a function of the transverse magnetic field for an incoming electron with a specific energy.