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Bi‐Induced Electron Concentration Enhancement Being Responsible for Photoluminescence Blueshift and Broadening in InAs Films
Author(s) -
Chen Xiren,
Zhao Huan,
Wu Xiaoyan,
Wang Lijuan,
Zhu Liangqing,
Song Yuxin,
Wang Shumin,
Shao Jun
Publication year - 2019
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201800694
Subject(s) - blueshift , photoluminescence , molecular beam epitaxy , laser linewidth , condensed matter physics , materials science , electron , semiconductor , flux (metallurgy) , scattering , epitaxy , chemistry , optoelectronics , nanotechnology , physics , optics , laser , layer (electronics) , quantum mechanics , metallurgy
Photoluminescence (PL) study is conducted on InAs films molecular beam epitaxially grown on GaAs substrates with different Bi flux levels. A PL peak blueshift accompanied by linewidth broadening is found with the increase of Bi/As flux ratio, in contrast to the common Bi isoelectronic incorporation or surfactant effect. It is, with detailed lineshape analysis and the evidence of PL peak splitting in a magnetic filed, attributed to the electron concentration enhancement induced by Bi flux. The electron concentration in InAs film is evaluated, which is about 5‐fold enhanced as Bi/As flux ratio rises up from 0 to 1 × 10 −3 . The temperature dependence of the PL spectrum indicates that the carrier redistribution augments while the carrier–phonon Fröhlich scattering weakens in InAs films with high Bi/As flux ratios. These findings reveal a novel Bi effect of electron concentration enhancement, and contribute to the basic knowledge of Bi in III–V semiconductors.