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Effects of Spatial Dispersion in Symmetric and Asymmetric Semiconductor Quantum Wells
Author(s) -
Kotova Lyubov V.,
Platonov Alexei V.,
Kats Vladimir N.,
Sorokin Sergey V.,
Ivanov Sergey V.,
André Regis,
Bugrov Vladislav E.,
Kochereshko Vladimir P.
Publication year - 2019
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201800665
Subject(s) - quantum well , polarization (electrochemistry) , condensed matter physics , spatial dispersion , exciton , physics , point reflection , dispersion (optics) , optics , semiconductor , materials science , chemistry , optoelectronics , laser
Effects of spatial dispersion in quantum wells are discovered and investigated in detail in reflection experiments. We studied oblique incidence of pure s and p polarized light which has been reflected elliptically polarized. The polarization degree of the reflected light is governed by the in‐plane photon momentum which is the distinctive feature of the spatial dispersion effects. The effects of spatial dispersion are allowed by symmetry in inversion‐asymmetric systems only. Therefore we investigated bulk‐inversion asymmetric ZnSe/ZnMgSSe and structure‐asymmetric GaAs/AlGaAs and CdZnTe/CdTe/CdMgTe quantum wells. We studied the reflected light polarization state in the vicinity of the heavy‐ and light‐exciton resonances where the spatial dispersion effects are resonantly enhanced.