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Optical Cavity Based on GaN Planar Nanowires Grown by Selective Area Metal‐Organic Vapor Phase Epitaxy
Author(s) -
Pozina Galia,
Ivanov Konstantin A.,
Mitrofanov Maxim I.,
Kaliteevski Mikhail A.,
Morozov Konstantin M.,
Levitskii Iaroslav V.,
Voznyuk Gleb V.,
Evtikhiev Vadim P.,
Rodin Sergey N.
Publication year - 2019
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201800631
Subject(s) - cathodoluminescence , materials science , nanowire , planar , optoelectronics , epitaxy , etching (microfabrication) , metalorganic vapour phase epitaxy , phase (matter) , fabry–pérot interferometer , trench , optics , luminescence , nanotechnology , wavelength , chemistry , computer graphics (images) , organic chemistry , physics , layer (electronics) , computer science
GaN planar nanowires (NWs) are fabricated by selective area metal‐organic vapor phase epitaxy using focused ion beam etching of trench pattern in the Si 3 N 4 mask. Two crystallographic orientations of NWs along[ 11 2 ¯ 0 ]and[ 10 1 ¯ 0 ]directions are investigated. The coherent growth is confirmed for both directions; however, the best morphology, crystalline and optical properties are found in the GaN planar NWs fabricated along the[ 10 1 ¯ 0 ]axis. Cathodoluminescence (CL) at 5 K reveals a presence of Fabry–Perot modes in the region of 1.8–2.5 eV for the NWs fabricated in the[ 10 1 ¯ 0 ]direction. The position and intensity of the Fabry–Perot peaks vary depending on measured point within the NW, which is explained by the model based on the Purcell coefficient calculations. It is shown that small fluctuations in the NW thickness cause a noticeable shift of the Fabry–Perot modes energies, while the enhancement or reduction of the emission intensity for the Fabry–Perot peaks depend on the position of the emitter inside the planar NW.