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Thermoelectric Efficiency Enhanced by Fano Interference in a Quantum Anomalous Hall Insulator Quantum Dot
Author(s) -
Zhang ShuFeng,
Zhang ChangWen,
Wang PeiJi,
Gong WeiJiang
Publication year - 2019
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201800629
Subject(s) - condensed matter physics , quantum dot , fano resonance , seebeck coefficient , thermoelectric effect , fano plane , physics , figure of merit , quantum hall effect , insulator (electricity) , materials science , magnetic field , optoelectronics , quantum mechanics , plasmon , mathematics , pure mathematics
Thermoelectric properties of a quantum dot (QD) connected to two metal leads are studied, where the QD is fabricated by the quantum anomalous Hall insulator. Surface states emerge at the edge of the QD due to the bulk‐boundary correspondence, while bulk states spread over the whole QD. Fano interference will occur between tunneling via surface and bulk states, which leads to asymmetric lineshape and minimum in the transmission and electric conductance spectrums. Both Seebeck coefficient and thermoelectric figure of merit are enhanced greatly in the energy regime of Fano interference. In addition, it is shown that Fano interference and thermoelectric properties can be well tuned by magnetic field.