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Misorientation Angle Dependence of Boron Incorporation Into CVD Diamond Delta Layers
Author(s) -
Lobaev Mikhail A.,
Gorbachev Alexei M.,
Vikharev Anatoly L.,
Radishev Dmitry B.,
Isaev Vladimir A.,
Bogdanov Sergey A.,
Drozdov Mikhail N.,
Yunin Pavel A.,
Butler Jim E.
Publication year - 2019
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201800606
Subject(s) - misorientation , hillock , materials science , diamond , boron , substrate (aquarium) , delta , layer (electronics) , crystallography , plane (geometry) , composite material , geometry , microstructure , chemistry , geology , oceanography , organic chemistry , mathematics , aerospace engineering , grain boundary , engineering
The results of investigations of boron incorporation into the delta layers of diamond, depending on the misorientation angle of the substrate surface relative to the crystallographic plane (001) are presented. Experiments are carried out on specially prepared substrates having several sectors with different miscut angles. The use of such substrates allowed to obtain data on the influence of the miscut angle in single growth process. The influence of the in‐plane orientation of miscut on the boron concentration in the delta layer and on the growth rate is also studied. When studying the incorporation of boron into delta layers, special attention is paid to the investigation of the surface of grown structures. It is found that the use of substrates with small miscut angles leads to formation of pyramidal hillock defects on the surface.