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Spin Filtering Magnetoresistance in Double‐Well Resonant Structures
Author(s) -
Nakamura Taketomo,
Hashimoto Yoshiaki,
Ke Tong,
Katsumoto Shingo
Publication year - 2019
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201800560
Subject(s) - quantum tunnelling , magnetoresistance , condensed matter physics , robustness (evolution) , spin (aerodynamics) , diode , electron , spin polarization , materials science , optoelectronics , physics , magnetic field , chemistry , quantum mechanics , biochemistry , gene , thermodynamics
A new type of spin filtering mechanism is proposed and experimental evidence for the function of filtering is presented. The mechanism utilizes both Rashba and Dresselhaus type spin–orbit interactions. The present device has an advantage that spin‐polarized electrons can be injected not only into lateral transport devices but also into vertical transport devices like resonant tunneling diodes. Such applicability to vertical type devices also provides possibility to gain robustness to the temperatures.