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Carrier Recombination, Long‐Wavelength Photoluminescence, and Stimulated Emission in HgCdTe Quantum Well Heterostructures
Author(s) -
Rumyantsev Vladimir,
Fadeev Mikhail,
Aleshkin Vladimir,
Kulikov Nikita,
Utochkin Vladimir,
Mikhailov Nikolai,
Dvoretskii Sergey,
Pavlov Sergey,
Hübers HeinzWilhelm,
Gavrilenko Vladimir,
Sirtori Carlo,
Krasilnik Zakhary F.,
Morozov Sergey
Publication year - 2019
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201800546
Subject(s) - photoluminescence , spontaneous emission , heterojunction , quantum well , optoelectronics , lasing threshold , materials science , photoconductivity , wavelength , carrier lifetime , recombination , band gap , radiative transfer , optics , physics , chemistry , laser , silicon , biochemistry , gene
Interband photoluminescence (PL) and stimulation emission (SE) from HgTe/HgCdTe quantum well (QW) heterostructures are studied in 5–20 µm wavelength range in regard to long‐wavelength lasing applications. The authors obtain carrier lifetimes using time‐resolved photoconductivity measurements and show that the dominating mechanism of carrier recombination changes from the radiative process to the non‐radiative one as the bandgap is decreased, limiting the “operating” temperature for SE. The authors suggest that decreasing the QW width should reverse the balance in carrier recombination in favor of radiative processes and demonstrate 75 K improvement in the “operating” temperature in structure with narrower QW.