Trap‐Related Breakdown and Filamentary Conduction in Carbon Doped GaN | Zendy

Koller Christian | Zendy; Pobegen Gregor | Zendy; Ostermaier Clemens | Zendy; Hecke Gebhard | Zendy; Neumann Richard | Zendy; Holzbauer Martin | Zendy; Strasser Gottfried | Zendy; Pogany Dionyz | Zendy

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Trap‐Related Breakdown and Filamentary Conduction in Carbon Doped GaN

Author(s) -

Koller Christian,

Pobegen Gregor,

Ostermaier Clemens,

Hecke Gebhard,

Neumann Richard,

Holzbauer Martin,

Strasser Gottfried,

Pogany Dionyz

Publication year - 2019

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.201800527

Subject(s) - materials science , hysteresis , doping , condensed matter physics , electroluminescence , electric field , electrode , thermal conduction , analytical chemistry (journal) , optoelectronics , layer (electronics) , nanotechnology , chemistry , physics , composite material , quantum mechanics , chromatography

A breakdown phenomenon is studied in thin carbon doped GaN layers (GaN:C; carbon concentration 10 19 cm −3 ) embedded between a top metal electrode and bottom n‐doped GaN (n‐GaN). When slowly sweeping positive bias V at the top electrode up and down, a hysteresis is found with transitions to on‐ and off‐states at voltagesV bd,upandV bd,down(< V bd,up ), respectively, and on‐ to off‐current ratios exceeding 10 3 . Breakdown atV bd,upoccurs at an electric field of about 0.5 MV cm −1 in GaN:C. ForV bd,down < V

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