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Trap‐Related Breakdown and Filamentary Conduction in Carbon Doped GaN
Author(s) -
Koller Christian,
Pobegen Gregor,
Ostermaier Clemens,
Hecke Gebhard,
Neumann Richard,
Holzbauer Martin,
Strasser Gottfried,
Pogany Dionyz
Publication year - 2019
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201800527
Subject(s) - materials science , hysteresis , doping , condensed matter physics , electroluminescence , electric field , electrode , thermal conduction , analytical chemistry (journal) , optoelectronics , layer (electronics) , nanotechnology , chemistry , physics , composite material , quantum mechanics , chromatography
A breakdown phenomenon is studied in thin carbon doped GaN layers (GaN:C; carbon concentration 10 19 cm −3 ) embedded between a top metal electrode and bottom n‐doped GaN (n‐GaN). When slowly sweeping positive bias V at the top electrode up and down, a hysteresis is found with transitions to on‐ and off‐states at voltagesV bd,upandV bd,down(< V bd,up ), respectively, and on‐ to off‐current ratios exceeding 10 3 . Breakdown atV bd,upoccurs at an electric field of about 0.5 MV cm −1 in GaN:C. ForV bd,down < V