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Magnetoresistance of Monolayer Graphene With Short‐Range Disorder
Author(s) -
Vasileva Galina,
Alekseev Pavel,
Vasilyev Yuri,
Dmitriev Alexander,
Kachorovskii Valentin,
Smirnov Dmitri,
Schmidt Hennrik,
Haug Rolf
Publication year - 2019
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201800525
Subject(s) - magnetoresistance , graphene , impurity , monolayer , condensed matter physics , materials science , doping , scattering , magnetic impurity , magnetic field , electron , chemistry , nanotechnology , physics , optics , organic chemistry , quantum mechanics
The effect of magnetic field on electron transport in graphene monolayers with various levels of impurity doping is studied. In samples with low impurity doping a square root magnetoresistance appears away from the Dirac point and no such magnetoresistance is observed in low mobility monolayers with high impurity doping. The difference in magnetoresistance is attributed to different types of scattering mechanisms in various samples. Our data for graphene monolayers with low impurity concentration shows a good agreement with theory over a wide range of magnetic fields.