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Influence of Sn/Ge Cation Exchange on Vacancy‐Ordered Double Perovskite Cs 2 Sn (1− x ) Ge x I 6 : A First‐Principles Theoretical Study
Author(s) -
Ma XiaXia,
Li ZeSheng
Publication year - 2019
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201800427
Subject(s) - band gap , perovskite (structure) , tin , materials science , doping , vacancy defect , crystal structure , crystallography , chemistry , metallurgy , optoelectronics
The toxicity of lead (Pb) and the volatility of organic cations in the typical Pb‐based organic–inorganic hybrid perovskite materials are the two key challenges in the emerging perovskite solar cells (PSCs). Thus, the development of lead‐free and inorganic perovskite materials for solar cells is very important. Here, the mixed vacancy‐ordered inorganic double perovskite Cs 2 Sn (1− x ) Ge x I 6 is studied to explore how gradual substitution of tetravalent gemanium (Ge 4+ ) for tetravalent tin (Sn 4+ ) influences the structure, as well as thermodynamic, electronic and mechanical properties of Cs 2 Sn (1− x ) Ge x I 6 on the basis of first‐principles theory calculation. By changing the concentration of doping Ge 4+ , it is shown that the values of band gap and concentration of Ge 4+ are in a linear relationship, satisfying the fitting equation: y = 1.04 − 0.704 x , where y is the value of band gap, and x is the concentration of Ge 4+ . Moreover, it is found that the volume of crystal cell generally decreases with the concentration of doping Ge 4+ increasing. This indicates that the reduction of band gap relates to contraction of crystal cell. In addition, in this study, it is shown that Cs 2 Sn 0.75 Ge 0.25 I 6 exhibits the best thermodynamics stability and the best mechanical ductility and flexibility.