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Memristive Properties of GaN HEMTs Containing Deep‐Level Traps
Author(s) -
Gomes João L.,
Nunes Luís C.,
Sobolev Nikolai A.,
Pedro José C.
Publication year - 2019
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201800387
Subject(s) - isothermal process , high electron mobility transistor , variable (mathematics) , trapping , transistor , materials science , gallium nitride , state variable , work (physics) , optoelectronics , physics , mathematics , thermodynamics , nanotechnology , quantum mechanics , layer (electronics) , mathematical analysis , biology , ecology , voltage
In this work, it is proved that GaN high‐electron‐mobility transistors (HEMTs) containing deep‐level traps obey the two fundamental memristive criteria. Furthermore, it is demonstrated, based on isothermal measurement data, that the possible set of state variables responsible for the observed memristivity in GaN HEMTs should include an additional variable that is not the temperature. Using a theoretical model, based on the Shockley‐Read‐Hall statistics, a deep‐level trapping‐related variable is suggested as the most probable hidden state variable.