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Influence of Boron Antisite Defects on the Electrical Properties of MBE‐Grown GaAs Nanowires
Author(s) -
Lancaster Suzanne,
Andrews Aaron Maxwell,
StoegerPollach Michael,
SteigerThirsfeld Andreas,
Groiss Heiko,
Schrenk Werner,
Strasser Gottfried,
Detz Hermann
Publication year - 2019
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201800368
Subject(s) - nanowire , ohmic contact , materials science , boron , heterojunction , transmission electron microscopy , optoelectronics , doping , acceptor , nanotechnology , layer (electronics) , condensed matter physics , chemistry , organic chemistry , physics
Nanowires provide a platform for the integration of heterogeneous materials in III–V systems grown on Si. B x Ga 1− x As is an interesting material for strain applications, which has not yet been studied in nanowire form. The incorporation of boron in GaAs nanowires is investigated via DC‐IV measurements. In transmission electron microscopy analysis a high concentration of boron is found at the nanowire edges, indicating surface segregation during growth. Nanowires grown under boron flux are found to exhibit Ohmic contacts and low contact resistances with p‐type metallizations such as Au/Zn/Au or Cr/Au. Back‐gated measurements confirmed the p‐type behavior of such nanowires, indicating that boron is incorporated on antisite defects where it acts as a doubly‐charged acceptor. This offers a new route for the inclusion of p‐doped layers in GaAs‐based nanowire heterostructures and the subsequent formation of Ohmic contacts.