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Growth of Nanocrystalline MoSe 2 Monolayers on Epitaxial Graphene from Amorphous Precursors
Author(s) -
Göhler Fabian,
Hadland Erik C.,
Schmidt Constance,
Zahn Dietrich R. T.,
Speck Florian,
Johnson David C.,
Seyller Thomas
Publication year - 2019
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201800283
Subject(s) - nanocrystalline material , materials science , raman spectroscopy , epitaxy , x ray photoelectron spectroscopy , graphene , amorphous solid , monolayer , annealing (glass) , chemical engineering , thin film , nanotechnology , substrate (aquarium) , layer (electronics) , crystallography , chemistry , optics , composite material , physics , oceanography , engineering , geology
A new approach to the growth of MoSe 2 thin films on epitaxial graphene on SiC(0001) by the use of modulated elemental reactants (MER) precursors has been reported. The synthesis applies a two‐step process, where first an amorphous precursor is deposited on the substrate which self‐assembles upon annealing. Films with a nominal thickness of about 1 ML are successfully grown on epitaxial graphene monolayer as well as buffer layer samples. Characterization of the films is performed using XPS, LEED, AFM, and Raman spectroscopy. The films are nanocrystalline and show randomly rotated domains. This approach opens up an avenue to synthesize a number of new van‐der‐Waals systems on epitaxial graphene and other substrates.