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Semipolar GaN(10–11) Epitaxial Layer Prepared on Nano‐Patterned SiC/Si(100) Template
Author(s) -
Bessolov Vasily,
Zubkova Anna,
Konenkova Elena,
Konenkov Steven,
Kukushkin Sergey,
Orlova Tatiana,
Rodin Sergey,
Rubets Vladimir,
Kibalov Dmitry,
Smirnov Valery
Publication year - 2019
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201800268
Subject(s) - materials science , nucleation , layer (electronics) , nanostructure , substrate (aquarium) , epitaxy , optoelectronics , diffraction , nano , buffer (optical fiber) , nanotechnology , composite material , optics , chemistry , computer science , telecommunications , oceanography , physics , organic chemistry , geology
A new approach is proposed to the synthesis of a semipolar GaN on a Si(100) substrate at the surface of which the V‐shaped nanostructures with the characteristic size of elements as low as 100 nm are formed. It has been demonstrated that application of buffer layers of 3C‐SiC and AlN enables formation of the GaN(10–11) layer characterized by the full width at half maximum value as low as ω θ ≈45 arcmin for the X‐ray diffraction rocking curve. The model based on anisotropic nucleation of AlN on the V‐shaped nanostructure is proposed to explain the growth of the GaN layer in a single semipolar direction.