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(In,Er) 2 O 3 Alloys and Photoluminescence of Er 3+ at Indirect Excitation via the Crystalline Host
Author(s) -
Kalusniak Sascha,
Orphal Laura,
Schäfer Peter,
Kuznetsov Alexander S.,
Benson Oliver,
Sadofev Sergey
Publication year - 2019
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201800243
Subject(s) - photoluminescence , materials science , excitation , sapphire , molecular beam epitaxy , analytical chemistry (journal) , ternary operation , lattice constant , bixbyite , crystallography , epitaxy , laser , optoelectronics , chemistry , optics , indium , nanotechnology , physics , layer (electronics) , chromatography , computer science , diffraction , electrical engineering , programming language , engineering
(In 1− x Er x ) 2 O 3 ternary alloys are grown on A‐plane sapphire wafers by plasma‐assisted molecular beam epitaxy. The layers crystallize in the cubic bixbyite structure with〈 111 〉axis aligned parallel to the substrate normal. The d‐spacing of the {111} lattice planes linearly increases with increasing the Er molar fraction in accordance with Vegard's law. Incorporation of Er in the In 2 O 3 matrix is accompanied by the widening of the optical gap and linear increase of the peak absorption coefficient reaching 380 cm −1 at the telecommunication wavelength of 1.54 µm. The samples exhibit Er 3+ ‐related emission at indirect excitation via the crystalline host at room temperature.