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Extremely Slow Decay of Yellow Luminescence in Be‐Doped GaN and Its Identification
Author(s) -
Lamprecht Matthias,
Thonke Klaus,
Teisseyre Henryk,
Boćkowski Michał
Publication year - 2018
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201800126
Subject(s) - photoluminescence , photoluminescence excitation , luminescence , materials science , doping , excitation , spectroscopy , absorption (acoustics) , analytical chemistry (journal) , optoelectronics , atomic physics , chemistry , physics , chromatography , quantum mechanics , composite material
The extremely slowly decaying yellow luminescence band around 2.08 eV in GaN:Be:O is studied by continuous‐wave and time‐resolved photoluminescence, as well as photoluminescence excitation spectroscopy and absorption. The lifetime obtained for this process is around 2.2 s and is thermally quenched for temperatures between 250 and 400 K. From the photoluminescence excitation measurements, two major pumping thresholds at around 2.7 and 3.1 eV can be identified. We discuss the origin of the Be‐related 2.08 eV transition as well as the origin of the overlaying photoluminescence bands at 1.88 and 2.12 eV.