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Calculated Characteristics of a Transistor Laser Using Alloys of Gr‐IV Elements
Author(s) -
Mukhopadhyay Bratati,
Sen Gopa,
De Souradeep,
Basu Rikmantra,
Chakraborty Vedatrayee,
Basu Prasanta K.
Publication year - 2018
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201800117
Subject(s) - common emitter , quantum well , laser , optoelectronics , transistor , fermi level , materials science , bipolar junction transistor , work (physics) , rate equation , physics , optics , electron , quantum mechanics , voltage , kinetics
The performance of a transistor laser (TL) structure consisting of SiGeSn emitter, SiGeSn base incorporating a GeSn quantum well (QW) and a GeSn collector is studied in the present work. The Sn concentration is chosen to yield direct band gap for all the layers. An earlier model developed for InGaAs QW in GaAs base, that could satisfactorily explain most of the experimental data, is employed to calculate terminal currents, threshold current, and light power output. The model solves continuity equation, considers virtual states above QW, Fermi Golden rule to calculate gain, Fermi statistics for occupancy of subbands and broadening of states. A low value of threshold base current is predicted.