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Static Structure of Liquid GeSe Under Pressure: Ab Initio Molecular Dynamics Simulations
Author(s) -
Koura Akihide,
Shimojo Fuyuki
Publication year - 2018
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201800103
Subject(s) - coordination number , molecular dynamics , ab initio , distortion (music) , materials science , phase (matter) , phase transition , compression (physics) , ab initio quantum chemistry methods , crystallography , molecular physics , chemical physics , condensed matter physics , chemistry , molecule , computational chemistry , physics , ion , composite material , optoelectronics , organic chemistry , cmos , amplifier
The authors have investigated the pressure dependence of the static structure of liquid GeSe based on ab initio molecular dynamics simulations. In a pressure range of about 240 GPa, there are four stages of compression process. In the first stage up to about 8 GPa, the Peierls‐type distortion, seen in the crystalline phase, is retained in the liquid phase. This Peierls‐type distortion completely dissolves during the second stage between 8 and 12 GPa. At this stage, a semiconductor–metal (SCM) transition also occurs. While the distance between Ge–Se atoms is almost unchanged in the first and second stages, it shortens with increasing pressure under further compression. The coordination number around Ge atoms is larger than that around Se atoms in the third stage up to about 40 GPa. Both the coordination numbers become the same in the fourth stage under higher pressure, where a denser liquid phase appears with the coordination number larger than eight.