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Vertical edge graphite layer on recovered diamond (001) after high‐dose ion implantation and high‐temperature annealing (Phys. Status Solidi B 9/2017)
Author(s) -
Inaba Masafumi,
Seki Akinori,
Sato Kazuaki,
Kushida Tomoyoshi,
Kageura Taisuke,
Yamano Hayate,
Hiraiwa Atsushi,
Kawarada Hiroshi
Publication year - 2017
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201770249
Subject(s) - diamond , materials science , annealing (glass) , graphite , ion implantation , ohmic contact , crystallinity , transmission electron microscopy , analytical chemistry (journal) , ion , layer (electronics) , composite material , nanotechnology , chemistry , organic chemistry , chromatography
A vertical edge graphite layer (VEG) fabricated on a diamond (001) substrate and the recovery of the crystallinity of the diamond substrate following high‐dose ion implantation and high‐temperature annealing (HTA) was investigated by Inaba et al. (article no. 1700040 ). The Al ions were implanted into the diamond (001) surface at 500 °C, followed by HTA at 1700 °C. The interval of vertical contrast was 0.335 nm, which corresponds to the graphite interlayer distance. The graphite edges with the height of ∼10 nm were vertically oriented, but each domain was randomly rotated in the in‐plane direction, which was confirmed via multiple cross‐sectional transmission electron microscopy (TEM) images obtained from different directions rotated 2–15° around the [001] axis. The initial sp 2 structural state of the VEG was nucleated in an early stage of the HTA and the surface diamond was subsequently reconstructed, which was confirmed using TEM and Rutherford backscattering/channeling (RBS‐C) measurements. The RBS‐C spectra indicate that the crystal is maintained after hot implantation and is well recovered by HTA. This VEG structure may be useful for ohmic contact with diamond electrical devices.